| 摘要 |
PROBLEM TO BE SOLVED: To attain a semiconductor laser device capable of obtaining an emission beam shape excellent in symmetry in the horizontal direction while achieving an end-face window structure to prevent deterioration of an end face in a semiconductor laser device including a GaN-based semiconductor. SOLUTION: The semiconductor laser device includes: a semiconductor layer laminate 12 formed on a principal plane of a substrate 11 and having a hollow section 12a; and a refractive index adjusting layer 31 burying the hollow section 12a. The semiconductor layer laminate 12 includes: a flat section 12b; and a forbidden bandwidth increase portion 16a formed between the flat section 12b and the hollow section 12a. A forbidden bandwidth of an active layer 16 of the forbidden bandwidth increase portion 16a is larger than that of the flat section 12b. The semiconductor layer laminate 12 also includes a striped optical waveguide 28 avoiding the hollow section 12a, including the flat section 12b and the forbidden bandwidth increased portion 16a, and extending in a direction crossing a front end face 29. COPYRIGHT: (C)2011,JPO&INPIT
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