SEMICONDUCTOR DEVICE FOR A HIGH VOLTAGE APPLICATION

摘要

A lateral high voltage semiconductor device comprises a first semiconductor region, a second semiconductor region arranged laterally to the first semiconductor region, and a drift region there between The drift region has a p drift sub-region and an n drift sub-region, forming a super junction The device comprises an insulating layer on a substrate, between the substrate and the super junction, wherein a substrate depletion region is formed, and wherein one of the first and second semiconductor regions extends past the insulating layer to the substrate The insulating layer may also be formed with an extension completely insulating the super junction arrangement from the substrate, and the device further comprises a further semiconductor region of the second conductivity type extending from an outer level of the super junction arrangement past the insulating layer to the substrate and being insulated from the super junction arrangement