| 摘要 |
PROBLEM TO BE SOLVED: To provide a simple IGBT (Insulated Gate Bipolar Transistor) transient characteristics simulation circuit that accurately simulates the transient characteristics of an IGBT. SOLUTION: The IGBT transient characteristics simulation circuit comprises an Nch MOSFET model 11, a PNP BJT model 12, and a current-controlled current source F1 (13). The current-controlled current source F1 (13) receives the input of a current flowing in a collector electrode C2 of the PNP BJT model 12 and simulates a tail current by outputting a certain current between the drain electrode D1 and the source electrode S1 of the Nch MOSFET model 11, thereby providing simulation effects on the basis of actual measurement results. COPYRIGHT: (C)2011,JPO&INPIT
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