| 发明名称 |
PLASMA PROCESSING APPARATUS INCLUDING ETCHING PROCESSING APPARATUS AND ASHING PROCESSING APPARATUS AND PLASMA PROCESSING METHOD USING PLASMA PROCESSING APPARATUS |
| 摘要 |
A diameter of a mounting unit of the stage of an asking processing apparatus is less than a diameter of a mounting unit of the stage of an etching processing apparatus, and the diameter of the mounting unit of the stage of the etching processing apparatus is less than a diameter of an objective item.
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| 申请公布号 |
US2010285670(A1) |
申请公布日期 |
2010.11.11 |
| 申请号 |
US20100840847 |
申请日期 |
2010.07.21 |
| 申请人 |
HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
KOBAYASHI HIROYUKI;IZAWA MASARU |
| 分类号 |
H01L21/465 |
主分类号 |
H01L21/465 |
| 代理机构 |
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代理人 |
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