发明名称 METHOD FOR FORMING ZIRCONIA FILM
摘要 Disclosed is a method for forming a zirconia film, wherein good film quality can be achieved by aerosolized gas deposition. Specifically disclosed is a method for forming a zirconia film by aerosolized gas deposition, wherein zirconia fine particles (P) having an average particle diameter of not less than 0.7 µm but not more than 11 µm and a specific surface area of not less than 1 m2/g but not more than 7 m2/g are contained in a hermetically sealed container (2); an aerosol (A) of the zirconia fine particles (P) is formed by introducing a gas into the hermetically sealed container (2); and the aerosol (A) of the zirconia fine particles (P) is conveyed into a film formation chamber (3), which is maintained at a pressure lower than that of the hermetically sealed container (2), through a conveying pipe (6) that is connected to the hermetically sealed container (2), so that the zirconia fine particles (P) are deposited on a substrate (S) that is contained in the film formation chamber (3). By using zirconia fine particles satisfying the above-described conditions, a dense zirconia thin film having high adhesion to a substrate can be formed.
申请公布号 WO2010128572(A1) 申请公布日期 2010.11.11
申请号 WO2010JP00325 申请日期 2010.01.21
申请人 FUCHITA NANOTECHNOLOGY LTD.;FUCHITA, EIJI 发明人 FUCHITA, EIJI
分类号 C23C24/04;C03C17/23;C04B41/87 主分类号 C23C24/04
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