<p>Disclosed is a method for producing a silicon epitaxial wafer, which comprises: a growth step G in which an epitaxial layer is grown on a silicon single crystal substrate; a first polishing step E in which both of the main surfaces of the silicon single crystal substrate are subjected to lapping at the same time before the growth step G; and a second polishing step H in which both of the main surfaces of the silicon single crystal substrate are subjected to finish polishing at the same time after the growth step.</p>
