PHOTORESIST MATERIAL, PHOTORESIST FILM, ETCHING METHOD USING SAME, AND NOVEL AZO DYE COMPOUND

摘要

PROBLEM TO BE SOLVED: To provide a photoresist material including a compound for photoresist, which has high solubility in a solvent superior in coating properties and allows precise microfabrication.

SOLUTION: The photoresist material includes a compound for photoresist expressed by general formula (1) wherein: Ap-represents a p-valent azo dye anion; p represents an integer within the range of 1-5; Xq+represents a q-valent cation; q represents an integer within the range of 1-5; and k' represents the number of Xq+required for neutralizing the electrical charge of each molecule as a whole. In this connection, the azo dye expressed by general formula (1) includes no metal ions in each molecule.

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