| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor, and a manufacturing method thereof, for reducing contact resistance between an oxide semiconductor layer and a source electrode layer or drain electrode layer, for stable electric characteristics. SOLUTION: A thin film transistor using an oxide semiconductor layer is formed by forming a buffer layer whose conductivity is higher than that of the oxide semiconductor layer, and electrically connecting the oxide semiconductor layer to a source electrode layer or drain electrode layer 105a, 105b through the buffer layer. The buffer layer is subjected to an inverse sputtering treatment and thermal treatment under nitrogen atmosphere, to form a buffer layer whose conductivity is higher than that of the oxide semiconductor layer. COPYRIGHT: (C)2011,JPO&INPIT |
