发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To suppress connection between an air gap and a via even if there occurs a positional shift between the via and an interconnect. SOLUTION: An interconnect 162 is embedded in a first insulating layer 120 and the upper surface of the interconnect is higher than the upper surface of the first insulating layer 120. An air gap 128 is disposed between the interconnect 162 and the first insulating layer 120. A second insulating layer 200 is formed at least over the first insulating layer 120 and the air gap 128. In the embodiment shown in Fig., the second insulating layer 200 does not cover the interconnect 162. An etching stopper film 210 is formed at least over the second insulating layer 200. In the embodiment shown in Fig., the etching stopper film 210 is formed over the second insulating layer 200 and the interconnect 162. A third insulating layer 220 is formed over the etching stopper film 210. A via 262 is provided in the third insulating layer 220 so as to be connected to the interconnect 162. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010258215(A) 申请公布日期 2010.11.11
申请号 JP20090106389 申请日期 2009.04.24
申请人 RENESAS ELECTRONICS CORP 发明人 USAMI TATSUYA
分类号 H01L21/768;H01L21/3065;H01L23/522 主分类号 H01L21/768
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