| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an inexpensively infrared sensor which has a high degree of freedom of layout of a temperature-sensitive element and high reliability. SOLUTION: On the main surface side of a silicon substrate 1 of which the main surface is a ä100} surface, a sacrifice layer 2 consisting of a polysilicon layer is formed along one diagonal line DG of a recess forming rectangular region DA, except the opposite end parts of the one diagonal line DG, and a membrane part 3 and the temperature-sensitive element 4 are formed sequentially. In the membrane part 3, thereafter, etching holes 7 are formed in parts corresponding respectively to the respective opposite end parts of the one diagonal line DG and the other diagonal line, and an alkaline solution is introduced through the etching holes 7 to form a recess 12 in the main surface of the silicon substrate 1. When forming the sacrifice layer 2, the sacrifice layer 2 is formed so that the opposite ends of the sacrifice layer 2 reach a virtual formation region VS in the silicon substrate 1 of a minimal quadrangular-pyramid-shaped recess 11 which communicates with each etching hole 7 and is formed in the main surface of the silicon substrate 1, in the course of anisotropic etching for forming the recess 12. COPYRIGHT: (C)2011,JPO&INPIT |
