| 摘要 |
PROBLEM TO BE SOLVED: To provide a reactive sputtering method capable of performing athin film formation while keeping a high sputter rate without being affected by an insulating film formed on the peripheral area of a target. SOLUTION: The sputtering method has a process of applying an electric power to conductive targets 41 arranged opposite to a substrate S to be treated in a sputtering chamber 11 while introducing a reactive gas into the sputtering chamber, forming a plasma atmosphere in the sputtering chamber and, thereby, sputtering the respective targets to form a predetermined thin film on the surface of the substrate to be treated, wherein an accumulation input power is monitored by a sputter power source E which performs power-inputting to the targets and, when the accumulation value attains a predetermined value, the introduction of the reactive gas is stopped, only the sputter gas is introduced and the targets are sputtered for a predetermined time. COPYRIGHT: (C)2011,JPO&INPIT |
