发明名称 TEMPLATES FOR USE IN IMPRINT LITHOGRAPHY AND RELATED INTERMEDIATE TEMPLATE STRUCTURES
摘要 A method of forming a template for use in imprint lithography. The method comprises providing an ultraviolet (“UV”) wavelength radiation transparent layer and forming a pattern in the UV transparent layer by photolithography. The pattern may be formed by anisotropically etching the UV transparent layer and may have feature dimensions of less than approximately 100 nm, such as dimensions of less than approximately 45 nm. An additional embodiment of the method comprises providing a UV opaque layer comprising a first pattern therein, forming a first UV transparent layer in contact with the first contact pattern of the UV opaque layer, forming a second UV transparent layer in contact with the first UV transparent layer, and removing the UV opaque layer to form the template. An intermediate template structure for use in imprint lithography is also disclosed. In other embodiments, a template that is opaque to UV wavelength radiation and a method of forming the same are disclosed.
申请公布号 US2010285167(A1) 申请公布日期 2010.11.11
申请号 US20100839755 申请日期 2010.07.20
申请人 MICRON TECHNOLOGY, INC. 发明人 SANDHU GURTEJ S.;RERICHA WILLIAM T.
分类号 B29C59/16 主分类号 B29C59/16
代理机构 代理人
主权项
地址