发明名称 |
Integrated circuit including a gate electrode |
摘要 |
An integrated circuit including a gate electrode is disclosed. One embodiment provides a transistor including a first source/drain electrode and a second source/drain electrode. A channel is arranged between the first and the second source/drain electrode in a semiconductor substrate. A gate electrode is arranged adjacent the channel layer and is electrically insulated from the channel layer. A semiconductor substrate electrode is provided on a rear side. The gate electrode encloses the channel layer at least two opposite sides.
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申请公布号 |
US7829892(B2) |
申请公布日期 |
2010.11.09 |
申请号 |
US20070926653 |
申请日期 |
2007.10.29 |
申请人 |
QIMONDA AG |
发明人 |
LUYKEN RICHARD JOHANNES;HOFMANN FRANZ;RISCH LOTHAR;MANGER DIRK;ROESNER WOLFGANG;SCHLOESSER TILL;SPECHT MICHAEL |
分类号 |
H01L29/12;H01L21/8238;H01L21/8242;H01L27/108 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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