| 摘要 |
<p>PURPOSE: A method is provided to control a pattern defect in the partial field region of a wafer edge region and to form a wafer pattern like a storage node. CONSTITUTION: A fence(410) has an inclined side towards the inner direction of a wafer in the edge part of the wafer(100). A first photoresist layer is extended to cover the fence on the wafer. An opening hole passes through a sacrificial layer through an etching process. A second photoresist comprises a negative resist.</p> |
