发明名称 |
Semiconductor memory, semiconductor memory system using the memory, and method for manufacturing quantum dot used in semiconductor memory |
摘要 |
A semiconductor memory has a composite floating structure in which quantum dots composed of Si and coated with a Si oxide thin film are deposited on an insulating film formed on a semiconductor substrate, quantum dots coated with a high-dielectric insulating film are deposited on the quantum dots, and quantum dots composed of Si and coated with a high-dielectric insulating film are further deposited. Each of the quantum dots includes a core layer and a clad layer which covers the core layer. The electron occupied level in the core layer is lower than that in the clad layer.
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申请公布号 |
US7829935(B2) |
申请公布日期 |
2010.11.09 |
申请号 |
US20080600986 |
申请日期 |
2008.03.26 |
申请人 |
HIROSHIMA UNIVERSITY |
发明人 |
MAKIHARA KATSUNORI;MIYAZAKI SEIICHI;HIGASHI SEIICHIRO |
分类号 |
H01L21/336;H01L29/788 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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