| 摘要 |
PURPOSE: A method for detecting the defect of a semiconductor device is provided to detect the defect of a contact which is formed in damascene process through a conventional electronic beam detecting method. CONSTITUTION: A test sample, having a contact and a wire which is connected to the contact, is provided(S301). A current is supplied to the wire(S302). Magnetic field which is formed around the wire and contact by applying current is read(S303). It is determined whether the contact has a defect according to the shape of the read magnetic field by using the difference between a normal point and an abnormal point(S304).
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