发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A semiconductor memory device is provided to reduce power consumption and time for a writing operation on a reference memory cell. CONSTITUTION: A plurality of memory cells(410) stores data. A data current generator(430) generates data current corresponding to the selected memory cell by a plurality of word lines. A reference current generator(440) generates a reference current corresponding to the reference memory cell selected by the plurality of word lines. A sense amplifier(450) sense and amplifies the data current and the reference current. A memory cell writing driver(460) drives a source line and a bit line in response to data.
申请公布号 KR20100119426(A) 申请公布日期 2010.11.09
申请号 KR20090038532 申请日期 2009.04.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, SUNG YEON;OH, YOUNG HOON
分类号 G11C11/15;G11C7/06;G11C8/08 主分类号 G11C11/15
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