发明名称 Edge termination structure for semiconductor components
摘要 A semiconductor component has a drift path (4) in a semiconductor body (5) of a semiconductor chip (6). The semiconductor component has an edge area (7) and a cell area (8), which is surrounded by the edge area (7). A trench structure (9), which surrounds the semiconductor component (6) in the edge area (7), is arranged in the edge area (7) of the semiconductor component (6). At least the trench walls (10) are covered by an insulation material (11). The trench structure (9) which surrounds the semiconductor component (6) has overlapping trench zones (12) with semiconductor material (13) arranged between them.
申请公布号 US7829972(B2) 申请公布日期 2010.11.09
申请号 US20070683788 申请日期 2007.03.08
申请人 INFINEON TECHNOLOGIES AUSTRIA AG 发明人 HIRLER FRANZ;KAPELS HOLGER
分类号 H01L29/00 主分类号 H01L29/00
代理机构 代理人
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