| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent abnormal etching due to remaining gas by safely removing remaining gas. CONSTITUTION: A hard mask pattern is formed on a substrate(31) in which an active area(36) is defined by an element isolation film(32). A recess pattern(33) has a line type crossing the element isolation film and the active film at the same time. The substrate includes a silicon substrate and the element isolation film has an oxide film.
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