| 摘要 |
PURPOSE: A semiconductor device having a decoupling capacitor and a method for fabricating the same are provided to solve the drop of the capacity of the decoupling capacitor by serially connecting decoupling capacitor. CONSTITUTION: A first decoupling capacitor(400) is formed in a peripheral substrate by laminating a gate insulating layer(32) and a gate electrode layer(33). The first interlayer insulating film(37) covers the first decoupling capacitor. The second inter dielectric(39) covers a bit line hard mask film(38). A storage node contact(41B) passes through a second inter dielectric.
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