METHOD FOR PREPARING SOI SUBSTRATE HAVING BACKSIDE SANDBLASTED

摘要

PURPOSE: A method of manufacturing an SOI substrate having a backside which is processed by sand blast is provided to perform sand blast on the backside of the SOI substrate to prevent the SOI substrate from slipping and flowing down. CONSTITUTION: The surface of the silicon thin film of an SOI substrate is etched over 10 nm. A protective tape is attached on the surface of the etched silicon thin film. The protective tape is exfoliated after sand blast processing. The protection tape etches the surface of the etched silicon thin film is etched and cleaned.