发明名称 |
Semiconductor apparatus and method of manufacturing semiconductor apparatus |
摘要 |
A semiconductor apparatus with a superjunction structure includes a gate electrode which fills a trench that is formed in an epitaxial layer, and a column region which is surrounded by the gate electrode in a plane view. A photomask for forming the column region is elaborated. The photomask has a compensation pattern that compensates a deformation of a photo resist pattern caused by photo interference and a deformation of the ion implantation region diffused by heat treatment. Therefore extending direction of the gate electrode and the outer edge of the column region are substantially parallel.
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申请公布号 |
US7829417(B2) |
申请公布日期 |
2010.11.09 |
申请号 |
US20080128865 |
申请日期 |
2008.05.29 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
NINOMIYA HITOSHI;MIURA YOSHINAO;KAWASHIMA YOSHIYA |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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