| 摘要 |
<p>PURPOSE: A method for fabricating a semiconductor device is provided to improve a process margin and productivity by using a low-temperature oxide instead of a multi-hard mask layer. CONSTITUTION: A sacrificial layer comprises a nitride film(13). The sacrificial layer has thickness of 100Å~1000Å. A hard mask layer(14) is formed by laminating silicon oxynitride and polysilicon film. The line width between a photosensitive pattern(17) is formed 1:2.5~3.5 ration of the line width of the photosensitive pattern.</p> |
