发明名称 |
Apparatus and method for low power, single-ended sensing in a multi-port SRAM using pre-discharged bit lines |
摘要 |
An apparatus and method for low power, single-ended sensing in a multi-port static random access memory (SRAM) using pre-discharged bit lines includes holding a bit line associated with the memory cell at a zero voltage potential when the memory cell is not being accessed; releasing the bit line from being held at a zero voltage potential when the memory cell is being accessed; charging the bit line to a first voltage potential greater in value than the zero voltage potential during an access of the memory cell, wherein charging the bit line to a first voltage potential occurs for a first predetermined period of time after access to the memory cell has begun; and sensing the memory cell contents during an access of the memory cell, wherein sensing of the memory cell contents occurs for a second predetermined period of time after access to the memory cell has begun.
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申请公布号 |
US7830727(B2) |
申请公布日期 |
2010.11.09 |
申请号 |
US20080135237 |
申请日期 |
2008.06.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ARSOVSKI IGOR;FRAGANO MICHAEL THOMAS;HOULE ROBERT MAURICE |
分类号 |
G11C7/06 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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