| 摘要 |
PURPOSE: A method of manufacturing a semiconductor including a step of cleaning a semiconductor substrate is provided to safely secure a gate property by implementing a stable gate pattern in forming the gate. CONSTITUTION: An insulating layer is in filled to the element isolation region on a semiconductor substrate to form an element isolation film. A screen insulating film is formed on the substrate having the element isolation film. Ion implantation is performed to control a threshold voltage. A gate insulating layer is formed on the active area of the semiconductor, and then a gate electrode is formed on the gate insulating layer.
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