Method for performing erasing operation in nonvolatile memory device

摘要

A method for performing erasing operation in a nonvolatile memory device includes the steps of applying an erasing voltage to P-wells of a selected memory cell block which is composed of a plurality of strings in each of which a plurality of memory cells and side memory cells are connected in series; performing soft programming operation by applying a soft programming voltage to word lines of the selected memory cell block; and programming the side memory cells by applying a programming voltage to the side memory cells.