| 摘要 |
PURPOSE: A circuit for protecting a semiconductor device from an electrostatic discharge is provided to reduce the layout of an electrostatic protection circuit by forming an electrostatic protection circuit with BJT in a matrix. CONSTITUTION: A signal line transmission line is connected between a signal input output pad and an internal circuit. A plurality of PNP bipolar transistors are connected in parallel between a power voltage terminal and the signal transmission line. A plurality of PNP bipolar transistors has a layout structure of a matrix type. A plurality of NPN bipolar transistors are connected in parallel between the transmission line and ground voltage terminal. |
