发明名称 |
Method of fabricating a high Q factor integrated circuit inductor |
摘要 |
A method of forming an inductor. The method including: (a) forming a dielectric layer on a top surface of a substrate; after (a), (b) forming a lower trench in the dielectric layer; after (b), (c) forming a resist layer on a top surface of the dielectric layer; after (c), (d) forming an upper trench in the resist layer, the upper trench aligned to the lower trench, a bottom of the upper trench open to the lower trench; and after (d), (e) completely filling the lower trench and at least partially filling the upper trench with a conductor in order to form the inductor.
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申请公布号 |
US7829427(B2) |
申请公布日期 |
2010.11.09 |
申请号 |
US20090612743 |
申请日期 |
2009.11.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
EDELSTEIN DANIEL C.;ANDRICACOS PANAYOTIS C.;COTTE JOHN M.;DELIGIANNI HARIKLIA;MAGERLEIN JOHN H.;PETRARCA KEVIN S.;STEIN KENNETH J.;VOLANT RICHARD P. |
分类号 |
H01F41/04;H01L21/20;H01F17/00;H01L21/02;H01L23/485;H01L23/522;H01L23/532;H01L27/08 |
主分类号 |
H01F41/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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