| 摘要 |
PURPOSE: The chalcopyrite compound semiconductor thin film of copper-indium-gallium-tellurium based precursor and a method for manufacturing the same are provided to improve the productivity by simultaneously supplying the precursors of copper, indium, gallium, and tellurium. CONSTITUTION: The inside of a chamber(10) is maintained under a vacuum condition. A substrate chuck(20) is arranged on the lower inner side of the chamber. A substrate(S) is transferred in the chamber through a gate. A shower head(30) is located on the upper side of the chamber in order to supply a processing gas. A copper precursor canister(40) supplies copper precursor.
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