| 摘要 |
PURPOSE: A semiconductor light emitting device, a manufacturing method thereof, and a light emitting device package are provided to improve light extraction efficiency by arranging a reflection layer on the lower side of a light emitting structure. CONSTITUTION: A first conductive semiconductor layer(110) has a plurality of holes and a P type dopant. A first electrode unit is arranged on the first conductive semiconductor layer. A second conductive semiconductor layer(130) includes an N type dopant under the active layer. A second electrode unit is arranged under the second conductive semiconductor layer. |
