| 摘要 |
PURPOSE: A semiconductor memory device is provided to suppress the increase of a layout area by preventing process variation. CONSTITUTION: A first memory cell(11-1) is connected between a first word line and a bit line. A second memory cell(12-1,12-2) is connected between a second word line and an inversion bit line. A precharge unit(20-1,20-2) precharges the bit line and the inversion bit line with a first voltage. A first sense amplifier(31-1,31-2) amplifies the bit line or inversion bit line with a second voltage. A bias unit(40-1,40-2) generates a voltage difference between a first node and a second node.
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