| 摘要 |
<p>PURPOSE: A multi-function nonvolatile memory device and a manufacturing method thereof are provided to write and erase data with various driving voltages by forming a charge trap region which traps or erase a charge with various driving voltages. CONSTITUTION: A tunnel oxide(1101) is formed on a semiconductor substrate(1000). A first charge trapping region(1211,1221) is separated and formed on the upper side of the tunnel oxide. A second charge trapping region(1300) is formed in order not to be overlapped with the first charge trapping region. A blocking oxide is formed on the tunnel oxide which is exposed between the first charge trapping regions.</p> |
