| 摘要 |
PURPOSE: A laser diode structure and a method for manufacturing the same are provided to eliminate the interference phenomenon of light by modifying the structure of a current blocking layer in a ridge wave-guide type laser diode. CONSTITUTION: A silicon oxide is formed on a ridge part forming area(210) as an etching mask using a photo lithography process. The thickness of the silicon oxide is 0.3um. The ridge part is formed by a wet etching process using an acetic acid and hydrochloric acid solution. The thickness of the ridge part is between 1um and 7um, preferably between 2um and 5um. A current blocking layer(220) is deposited on the ridge part a plane part(230), which is adjacent to the ridge part, using a plasma enhanced chemical vapor deposition process. The current blocking layer is eliminated using a reactive ion etcher. |
