发明名称 METHODS FOR FORMING CO-PLANAR WAFER-SCALE CHIP PACKAGES
摘要 Economical methods for forming a co-planar multi-chip wafer-level packages are proposed. Partial wafer bonding and partial wafer dicing techniques are used to create chips as well as pockets. The finished chips are then mounted in the corresponding pockets of a carrier substrate, and global interconnects among the chips are formed on the top planar surface of the finished chips. The proposed methods facilitate the integration of chips fabricated with different process steps and materials. There is no need to use a planarization process such as chemical-mechanical polish to planarize the top surfaces of the chips. Since the chips are precisely aligned to each other and all the chips are mounted facing up, the module is ready for global wiring, which eliminates the need to flip the chips from an upside-down position.
申请公布号 KR100992015(B1) 申请公布日期 2010.11.05
申请号 KR20077011373 申请日期 2005.11.16
申请人 发明人
分类号 H01L21/301;H01L21/78;H01L23/12;H01L23/48 主分类号 H01L21/301
代理机构 代理人
主权项
地址