| 摘要 |
Disclosed is a semiconductor light emitting device (100). The semiconductor light emitting device includes a light emitting structure (110) including a plurality of compound semiconductor layers (111,113,115), a second electrode layer (130) below the light emitting structure, a channel layer (121) between the light emitting structure and an edge area of the second electrode layer, a buffer layer (123,123A) on the channel layer, and a passivation layer (125) on the buffer layer. |
