METHOD OF MANUFACTURING SOI WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing an SOI wafer with a partial SOI structure at low cost in an easy manner.

SOLUTION: The method of manufacturing the SOI wafer with the partial SOI structure includes steps of: forming a first insulating film on a surface of a silicon single-crystal wafer; forming a non-single-crystal film on a surface of the first insulating film; forming an opening that reaches the surface of the surface of the silicon single-crystal wafer from a surface of the non-single-crystal silicon film to obtain a silicon single-crystal wafer having the first insulating film and non-single-crystal silicon film laminated partially on the surface; and forming the partial SOI structure including the first insulating film as a buried insulating film by causing the non-single-crystal silicon film to migrate so as to come into contact with a part of the opening where the silicon single-crystal wafer is exposed by carrying out RTA processing on the silicon single-crystal wafer in an atmosphere of hydrogen gas, inert gas or a mixed gas of the hydrogen gas and the inert gas, and changing the non-single-crystal silicon film into a single-crystal film.

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