发明名称 |
MSB-BASED ERROR CORRECTION FOR FLASH MEMORY SYSTEM |
摘要 |
A flash memory system includes a multi-bit flash memory device having a memory cell array including memory cells arranged in rows and columns; a read circuit configured to read data from the memory cell array; and control logic configured to control the read circuit so as to successively read data from a selected memory cell and adjacent memory cells to the selected memory cell in response to a request for a read operation with respect to MSB data stored in the selected memory cell. A compare circuit is configured to compare data read from the adjacent memory cells to the selected memory cell provided from the multi-bit flash memory device and to correct data read from the selected memory cells based upon the comparison result.
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申请公布号 |
US2010277979(A1) |
申请公布日期 |
2010.11.04 |
申请号 |
US20100836249 |
申请日期 |
2010.07.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG DONG-KU;LEE SEUNG-JAE;KONG JUN-JIN |
分类号 |
G11C16/04;G11C16/06 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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