| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern, with which a finer resist pattern with a controlled line width change can be formed readily and efficiently, while reducing the occurrence of damages. <P>SOLUTION: The method for forming a resist pattern includes a step (1) of forming an insolubilized resist pattern, by using a resin composition for insolubilizing a resist pattern, the composition containing a polymer having a repeating unit expressed by formula (1) (wherein R<SP>1</SP>represents a hydrogen atom, or the like, and R<SP>2</SP>represents a methylene group, or the like) and a solvent; a step (2) of forming a resist layer on a substrate, where the insolubilized resist pattern is formed and selectively exposing the resist layer; and a step (3) of forming a second resist pattern. <P>COPYRIGHT: (C)2011,JPO&INPIT |
