| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for producing an oxygen-containing Cu alloy film which can allow a wiring film to have lowered resistance in a process temperature zone, when the oxygen-containing Cu alloy film is used as the wiring film of a flat panel display or the like, and which exhibits excellent adhesiveness to a glass substrate, a Si layer or a SiN<SB>x</SB>protective film layer. <P>SOLUTION: The method for producing the oxygen-containing Cu alloy film comprises the steps of: preparing a Cu alloy target containing 0.1-1.0 atomic% B as an additional element, 0.1-2.0 atomic% at least one element capable of producing a compound together with B, the balance of Cu with inevitable impurities; and sputtering the Cu alloy target in an atmosphere where Ar and oxygen gas are introduced to obtain the oxygen-containing Cu alloy film. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
