| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for achieving low power consumption of a semiconductor device by improving a shape at a boundary between an SOI layer of an SOI substrate and shallow-trench element isolation. SOLUTION: A position (SOI edge 10) at which a main surface of a silicon substrate 3 and a line extending along a side surface of an SOI layer 1 intersect with each other is retreated in a direction opposite to shallow-trench element isolation 4 compared to a position (STI edge 9) at which a line extending along a sidewall 8 of a shallow trench and a line extending along the main surface of the silicon substrate 3 intersect with each other. A corner of the silicon substrate 3 at the STI edge 9 has a curved surface. COPYRIGHT: (C)2011,JPO&INPIT
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