TRANSVERSE JUNCTION FIELD-EFFECT TRANSISTOR

摘要

Disclosed is a transverse junction field effect transistor wherein leakage currents can be prevented and sufficient voltage-withstanding ability can be achieved. In a transverse JFET (10), a buffer layer (11) is disposed on the main surface of an SiC substrate (1) and includes p-type impurities. A channel layer (12) is disposed upon the buffer layer (11) and includes n-type impurities at a concentration higher than the concentration of p-type impurities in the buffer layer (11). An n-type source region (15) and a drain region (16) are formed separate from one another in the surface layer of the channel layer (12) and a p-type gate region (17) is positioned between the source region (15) and drain region (16) in the surface layer of the channel layer (12). A barrier region (13) is disposed in the area below the gate region (17) in the boundary region of the channel layer (12) and buffer layer (11), and contains p-type impurities at a higher concentration than the concentration of the p-type impurities in the buffer layer (11).