| 摘要 |
Provided is an SOI wafer inspection method characterized by: derivation of profiles (P1, P2) that indicate the wavelength dependence of reflectivity with respect to light of wavelengths equal to and greater than that of visible light, for both an SOI wafer being inspected and an SOI wafer having an SOI layer that is either thicker or thinner by a prescribed amount t [nm] compared to that of the SOI wafer being inspected; derivation of either a profile (P3) indicating the difference between P1 and P2 or a profile (P4) indicating the percentage change; irradiation of the surface of the SOI waver being inspected, with light of a wavelength ? or wavelength band selected on the basis of the maximal peak wavelength ?M for derived profile P3 or P4; detection of reflected light from the SOI wafer; and detection of locations where the detected intensity of the reflected light increases and peaks, indicating defects stemming from variations in the SOI layer thickness. This allows highly-sensitive and low-cost detection of defects stemming from variations in film thickness on SOI wafers, said detection not being influenced by foreign matter on the surfaces of said SOI wafers. |
