| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an SJ structure, capable of improving the yield. SOLUTION: The semiconductor device includes an element region 6 having the SJ structure; a first element peripheral region 7 which is arranged on an n+ type drain layer 10 while surrounding the element region 6, has an n-type pillar layer 15 which is disposed in parallel to an n-type pillar layer 11 and a p-type pillar layer 21 and in which conductivity-types are alternately arranged and a p-type pillar layer 25 having a larger amount of impurities as compared to the n-type pillar layer 15, and has a field plate electrode 44 arranged in the region and on a side confronted with the n+ type drain layer 10 in the n-type pillar layer 15 and the p-type pillar layer 25 through an interlayer dielectric 53; and a second element peripheral region 8 which surrounds the first element peripheral region 7, is installed on the n+ type drain layer 10, and has an n-type pillar layer 17 which is installed in parallel to the n-type pillar layer 15 and the p-type pillar layer 25 and in which the conductivity-types are alternately arranged and a p-type pillar layer 27 having the smaller amount of the impurities as compared to the n-type pillar layer 17. COPYRIGHT: (C)2011,JPO&INPIT
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