发明名称 |
METHOD OF FORMING LUTETIUM AND LANTHANUM DIELECTRIC STRUCTURES |
摘要 |
Methods of forming dielectric structures are shown. Methods of forming dielectric structures are shown that include lutetium oxide and lanthanum aluminum oxide crystals embedded within the lutetium oxide. Specific methods shown include monolayer deposition which yields process improvements such as chemistry control, step coverage, crystallinity/microstructure control.
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申请公布号 |
US2010276748(A1) |
申请公布日期 |
2010.11.04 |
申请号 |
US20100837303 |
申请日期 |
2010.07.15 |
申请人 |
AHN KIE Y;FORBES LEONARD |
发明人 |
AHN KIE Y.;FORBES LEONARD |
分类号 |
H01L29/792;H01L21/31;H01L21/336 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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