| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device, which can greatly lower an interface level between a silicon carbide substrate and a silicon dioxide film by using a practical process being superior in mass productivity, and which is superior in reliability and electric characteristics as a device. SOLUTION: After the silicon dioxide film 51 is formed, a silicon oxynitride film 61 is formed on the silicon dioxide film 51 by a CVD (Chemical Vapor Deposition) method. Then, the silicon carbide base substance 10, on which the silicon oxynitride film 61 is deposited, is introduced in a nitriding process reaction furnace, and is subjected to a nitriding process in an atmosphere of nitrogen oxide gas. COPYRIGHT: (C)2011,JPO&INPIT
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