A method forms a first inorganic dielectric layer having a first concentration of defects and a second inorganic dielectric layer in contact with a first layer and having a second lesser concentration of defects.
申请公布号
US2010279514(A1)
申请公布日期
2010.11.04
申请号
US20100833354
申请日期
2010.07.09
申请人
HEWLETT-PACKARD DEVELOPMENT COMPANY LP
发明人
HERMAN GREGORY S.;MARDILOVICH PETER;HOFFMAN RANDY L.;KRAMER LAURA LYNN;ULMER KURT M.
