| 摘要 |
A phase-change material for use in a phase-change memory device is provided. The phase-change material includes at least one metal and is reversibly phase-changeable, switchable, to a detectable metallic glass state or to a detectable crystalline state thereof. There is also provided a phase-change memory, that includes at least one phase change memory cell comprising the phase change material whereby the phase-change material and thereby the phase-change memory cell is reversibly programmable to one of these states. A method of fabricating the phase-change memory is also provided.
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