METHOD FOR MANUFACTURING A SILICON-ON-INSULATOR SOI WAFER WITH AN ETCH STOP LAYER,申请号KR20077007248-传众专利搜索

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发明名称	METHOD FOR MANUFACTURING A SILICON-ON-INSULATOR SOI WAFER WITH AN ETCH STOP LAYER
摘要
申请公布号	KR100992210(B1)	申请公布日期	2010.11.04
申请号	KR20077007248	申请日期	2005.11.09
申请人		发明人
分类号	H01L21/20;H01L27/12	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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