| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide-semiconductor target having a correct Zn/(Zn+Sn) composition of a ZTO (zinc-tin composite oxide)-based oxide-semiconductor material which has high mobility and the stability of a threshold potential, and is little restricted by the aspect of costs, resources and a process, and to provide an oxide-semiconductor device using the same. <P>SOLUTION: A sintered compact of the zinc-tin composite oxide in which the Zn/(Zn+Sn) composition is 0.6-0.8 is used as the target. In addition, the resistivity of the target itself is controlled to 1 Ωcm or more which is high resistance. Furthermore, a total concentration of impurities is controlled to 100 ppm or less. <P>COPYRIGHT: (C)2011,JPO&INPIT |
