| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a Schottky barrier diode in which a leak current hardly occurs in application of a reverse voltage and an on-voltage is low. <P>SOLUTION: The Schottky barrier diode 10 has: first semiconductor layers 14, 16 of a first conductivity-type; an ohmic electrode 40 ohmic-connected to the first semiconductor layers 14, 16; a Schottky electrode 30 Schottky-joined to the first semiconductor layers 14, 16; and a second conductivity-type second semiconductor layer 20 hetero-junction to the first semiconductors 14, 16 in a region adjacent to a region Schottky-joined to the Schottky electrode 30. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
